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首页> 外文期刊>Microelectromechanical Systems, Journal of >Fabrication of Vacuum-Sealed Capacitive Micromachined Ultrasonic Transducers With Through-Glass-Via Interconnects Using Anodic Bonding
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Fabrication of Vacuum-Sealed Capacitive Micromachined Ultrasonic Transducers With Through-Glass-Via Interconnects Using Anodic Bonding

机译:使用阳极键合的玻璃通孔互连的真空密封电容式微超声传感器的制造

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This paper presents a novel fabrication method for vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT) arrays that are amenable to 3D integration. This paper demonstrates that MEMS structures can be directly built on a glass substrate with preformed through-glass-via (TGV) interconnects. The key feature of this new approach is the combination of copper through-glass interconnects with a vibrating silicon-plate structure suspended over a vacuum-sealed cavity by using anodic bonding. This method simplifies the overall fabrication process for CMUTs with through-wafer interconnects by eliminating the need for an insulating lining for vias or isolation trenches that are often employed for implementing through-wafer interconnects in silicon. Anodic bonding is a low-temperature bonding technique that tolerates high surface roughness. Fabrication of CMUTs on a glass substrate and use of copper-filled vias as interconnects reduce the parasitic interconnect capacitance and resistance, and improve device performance and reliability. A 16×16 -element 2D CMUT array has been successfully fabricated. The fabricated device performs as the finite-element and equivalent circuit models predict. A TGV interconnect shows a 2- Ω parasitic resistance and a 20-fF shunt parasitic capacitance for 250- μm via pitch. A critical achievement presented in this paper is the sealing of the CMUT cavities in vacuum using a PECVD silicon nitride layer. By mechanically isolating the via structure from the active cells, vacuum sealing can be ensured even when hermetic sealing of the via is compromised. Vacuum sealing is confirmed by measuring the deflection of the edge-clamped thin plate of a CMUT cell under atmospheric pressure. The resonance frequency of an 8-cell 2D array element with 78- μm diameter circular cells and a 1.5- μm plate thickness is measured as 3.32 MHz at 15-V dc voltage (80% Vpull-in). [2016-0200]
机译:本文提出了一种适用于3D集成的真空密封电容微加工超声换能器(CMUT)阵列的新颖制造方法。本文证明了MEMS结构可以直接在具有预制的玻璃通孔(TGV)互连的玻璃基板上构建。这种新方法的关键特征是通过阳极键合将铜玻璃通孔互连与悬挂在真空密封腔上方的振动硅板结构相结合。通过消除对通孔或隔离沟槽的绝缘衬里(通常用于在硅中实现直通晶片互连)的需要,该方法简化了具有直通晶片互连的CMUT的整体制造过程。阳极键合是一种可承受高表面粗糙度的低温键合技术。在玻璃基板上制造CMUT以及将铜填充的通孔用作互连可以减少寄生互连的电容和电阻,并改善器件性能和可靠性。已经成功制造了16×16元素2D CMUT阵列。所制造的器件的性能与有限元和等效电路模型所预测的一样。 TGV互连通过节距显示250μm的2Ω寄生电阻和20 fF并联寄生电容。本文提出的关键成就是使用PECVD氮化硅层在真空中密封CMUT腔。通过将通孔结构与有源单元机械隔离,即使在损害通孔的气密性的情况下,也可以确保真空密封。通过测量大气压下CMUT电池的夹边薄板的挠度来确认真空密封。在15V直流电压(80%Vpull-in)下,具有78-μm直径的圆形单元和1.5μm板厚的8单元2D阵列元件的共振频率为3.32 MHz。 [2016-0200]

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