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Optical and Electrical Properties of Nano Crystalline Transparent Conducting SnO_2 Thin Films Grown by Nebulized Spray Pyrolysis Technique at Different Substrate Temperature

机译:雾化喷雾热解技术在不同衬底温度下生长纳米晶态透明导电SnO_2薄膜的光电性能

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摘要

Nano crystalline, transparent conducting tin dioxide (SnO_2) thin films were grown on glass substrates using the nebulized spray pyrolysis technique at various substrate temperatures 250 ℃, 300 ℃ and 350 ℃ respectively. The XRD studies reveal that the structure of SnO_2 thin films is a tetragonal system with a rutile structure. The preferred orientation of SnO_2 changed from (2 0 0) to (1 0 1) as the substrate temperature increased. The morphology and the surface roughness of thin films were studied by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The optical absorption and transmittance spectra were recorded using UV-Vis spectroscopy and its band gap values were calculated as 4.05 eV, 3.9 eV and 3.8 eV for direct allowed and 1.60 eV, 1.70 eV and 1.78 eV for indirect allowed transition. Four probe method was adopted to study the room temperature resistivity of SnO_2 films and were determined as 46.11 Ωcm, 16.45 Ωcm and 10.53 Ωcm respectively. Activation energy was also determined from the I-V plot for all three films. N-type conductivity of the tin dioxide thin films was observed by hot probe technique. As the prepared films have high optical transmittance (>80%) in the visible region and high room temperature conductivity, prepared SnO_2 thin films can be used as the transparent conducting oxide (TCO) material.
机译:使用雾化喷雾热解技术分别在250℃,300℃和350℃的各种基板温度下,在玻璃基板上生长了纳米晶透明导电二氧化锡(SnO_2)薄膜。 XRD研究表明,SnO_2薄膜的结构是具有金红石结构的四方晶系。随着衬底温度的升高,SnO_2的优选取向从(2 0 0)变为(1 0 1)。分别通过扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了薄膜的形貌和表面粗糙度。使用UV-Vis光谱法记录光吸收和透射光谱,对于直接允许,其带隙值计算为4.05 eV,3.9 eV和3.8 eV,对于间接允许跃迁,其带隙值计算为1.60 eV,1.70 eV和1.78 eV。采用四探针法研究了SnO_2薄膜的室温电阻率,分别为46.11Ωcm,16.45Ωcm和10.53Ωcm。还从所有三个膜的I-V图确定了活化能。通过热探针技术观察到二氧化锡薄膜的N型导电性。由于制备的薄膜在可见光区具有较高的透光率(> 80%),并且具有较高的室温电导率,因此可以将制备的SnO_2薄膜用作透明导电氧化物(TCO)材料。

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