Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

摘要

Ferroelectric Pb(Zr,Ti)O_3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500℃. These PZT films, with thicknesses of about 1000 A, show high charge storage densities (P_(max) - P_r = 10-15 μC cm~(-2) for 1.5 V operation) and low leakage current densities (≈10~(-6) A cm~(-2) at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.