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Molecular design for photo and electron beam lithography with thin films of coordination compounds

机译:具有配位化合物薄膜的光电子束光刻的分子设计

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摘要

The photochemistry of coordination complexes in the solid state has been investigated with a view towards developing a new method for the photolithographic deposition of materials. Ultraviolet exposure of thin films of coordination complexes through an optical lithography mask results in the patterning of materials in the exposed regions. The development of this method requires photochemically active complexes which efficiently eject ligands upon photolysis to produce the desired material in a solid state thin film. In this paper the photochemistry of thin films of inorganic complexes of Co, Cu, Ni, Pd, Pt and U is presented. These examples will be used to outline the approaches used to design suitable precursor molecules for film deposition. Mechanistic studies of the surface photochemical reactions along with evidence for submicron resolution lithography of materials derived from these complexes will be highlighted. The use of electron beams to induce similar chemistry will also be discussed.
机译:为了开发一种用于材料的光刻沉积的新方法,已经研究了固态的配位配合物的光化学。通过光学光刻掩模对配位配合物的薄膜进行紫外线曝光会导致曝光区域中的材料形成图案。该方法的发展需要光化学活性的配合物,该配合物在光解后能有效地喷射出配体,从而在固态薄膜中产生所需的材料。本文介绍了Co,Cu,Ni,Pd,Pt和U无机配合物薄膜的光化学性质。这些示例将用于概述用于设计用于膜沉积的合适前体分子的方法。将重点介绍表面光化学反应的机理研究,以及从这些络合物衍生的材料的亚微米分辨率光刻技术。也将讨论使用电子束诱导相似的化学反应。

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