Diamond growth on CoSi_2/Si by bias-enhanced microwave plasma chemical vapor deposition method

摘要

Diamond was grown on polycrystalline CoSi_2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ～10~9 cm~-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi_2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi_2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (100) texture.