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Hybrids of Organic Molecules and Flat, Oxide-Free Silicon: High-Density Monolayers, Electronic Properties, and Functionalization

机译:有机分子和平坦,无氧化物的硅的杂化物:高密度单分子膜,电子性质和功能化

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摘要

Since the first report of Si−C bound organicnmonolayers on oxide-free Si almost two decades ago, ansubstantial amount of research has focused on studying thenfundamental mechanical and electronic properties of these Simolecule surfaces and interfaces. This feature article coversnthree closely related topics, including recent advances innachieving high-density organic monolayers (i.e., atomic coveragen>55%) on oxide-free Si(111) substrates, an overview ofnprogress in the fundamental understanding of the energeticsnand electronic properties of hybrid Si/molecule systems, and anbrief summary of recent examples of subsequent functionalizationnon these high-density monolayers, which can significantlynexpand the range of applicability. Taken together, these topicsnprovide an overview of the present status of this active area of research.
机译:自从大约二十年前第一个关于Si-C结合有机单层在无氧化物的Si上的报道以来,大量的研究集中在研究这些Si /分子表面和界面的基本机械和电子性能。这篇专题文章涵盖了三个密切相关的主题,包括在无氧化物的Si(111)衬底上实现高密度有机单层(即原子覆盖率n> 55%)的最新进展,概述了对杂化材料的能级和电子性质的基本理解Si /分子系统,以及这些高密度单分子层随后功能化的最新实例的简要概述,它们可以显着扩大适用范围。总而言之,这些主题概述了这一活跃研究领域的现状。

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  • 来源
    《Langmuir》 |2012年第26期|9920-9929|共10页
  • 作者单位

    †Laboratory of Organic Chemistry Wageningen University Dreijenplein 8 6703 HB Wageningen The Netherlands‡Department of Materials and Interfaces Weizmann Institute of Science Rehovoth 76100 Israel§Department of Chemical Engineering and Russell Berrie Nanotechnology Institute Technion - Israel Institute of Technology Haifa32000 Israel;

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