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Towards the hybrid organic semiconductor fet (hosfet) : electrical and electrochemical characterization of functionalized and unfunctionalized, covalently bound organic monolayers on silicon surfaces

机译:迈向混合有机半导体胎儿(hosfet):硅表面上官能化和非官能化,共价键合有机单层的电学和电化学表征

摘要

Since their introduction in 1993 the class of covalently bound organic monolayers on oxide free silicon surfaces have found their way to multiple application fields such as passivation layers in solar cells, masking layers in lithographic processing, insulating films in hybrid moleculesilicon electronics, and memory devices. Furthermore, these monolayers can easily be functionalized with a large variety of receptor groups or sensing moieties, thereby forming a new promising material for incorporation in sensory devices such as FET based sensors. In this thesis an overview is given of the electrical and electrochemical characterization of silicon based devices, such as Metal-Insulator-Silicon (MIS) structures, lectrolyte-Insulator-Silicon (EIS) structures and the newly proposed Hybrid Organic Semiconductor FET (HOSFET), with either functionalized or unfunctionalized monolayers incorporated.
机译:自从1993年问世以来,无氧化物硅表面上共价键合的有机单层膜已进入多种应用领域,例如太阳能电池中的钝化层,光刻处理中的掩膜层,混合分子硅电子产品中的绝缘膜以及存储设备。此外,这些单分子层可以很容易地用各种各样的受体基团或感测部分进行功能化,从而形成一种新的有前途的材料,可以并入到诸如基于FET的传感器等传感设备中。本文概述了硅基器件的电学和电化学特性,例如金属-绝缘体-硅(MIS)结构,电解质-绝缘体-硅(EIS)结构以及新近提出的混合有机半导体FET(HOSFET) ,并结合了功能化或非功能化单层。

著录项

  • 作者

    Faber Erik Jouwert;

  • 作者单位
  • 年度 2006
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
  • 中图分类

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