Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

摘要

In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The size of the MEMS package is 1mm x 1mm x 700 μm. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.