机译:富锌和富氧生长条件的两步生长对蓝宝石上等离子辅助分子束外延生长的(1120)ZnO薄膜性能的影响
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;
Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea;
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;
Department of Physics, Kongju National University, Gongju 314-701, Republic of Korea;
Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8587, Japan;
机译:等离子体辅助分子束外延在(1120)a面蓝宝石衬底上生长高质量ZnO薄膜
机译:点缺陷对富氧环境中等离子辅助分子束外延生长的非掺杂和掺杂Ga的ZnO薄膜性能的影响
机译:缓冲层生长温度对等离子体辅助分子束外延生长在多孔硅上生长的ZnO薄膜性能的影响
机译:等离子体辅助分子束外延对ZnO衬底上ZnO同质外延膜生长条件的影响
机译:电子回旋共振等离子体辅助分子束外延生长氮化镓铟的生长优化和表征。
机译:富含富含型和Zn的生长条件下ALD沉积的薄ZnO膜的结构性质及其与电参数的关系
机译:等离子辅助分子束外延在O形ZnO(0001)上生长的INN薄膜的结构特性