Molecular Sensing with Ultrafine Silver Crystals on Hexagonal Aluminum Nitride Nanorod Templates

摘要

Group III-nitride semiconductors are automatic choices for nanoscale optoelectronic device materials working over a wide range of wavelengths.A recent report of an infrared band gap for indium nitride(InN)and the deep ultraviolet band gap of aluminum nitride(A1N)stretches the limit of their optical domain.The ongoing furor about the fundamental gap of InN and the continued development of gallium nitride(GaN)as a light-emitting diode material has involved intense scientific work on these materials.A1N was known for its high thermal conductivity,hardness,and chemical inertness,and it provides a better lattice-matched substrate for GaN deposition.