首页> 外文期刊>Journal of the American Chemical Society >((Alkyloxy)carbonyl)cyanomethylene-Substituted Thienoquinoidal Compounds: a New Class of Soluble n-Channel Organic Semiconductors for Air-Stable Organic Field-Effect Transistors
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((Alkyloxy)carbonyl)cyanomethylene-Substituted Thienoquinoidal Compounds: a New Class of Soluble n-Channel Organic Semiconductors for Air-Stable Organic Field-Effect Transistors

机译:((烷氧基)羰基)氰基亚甲基取代的喹诺酮类化合物:新型的可溶的n沟道有机半导体,用于稳定空气的有机场效应晶体管

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摘要

A new n-channel semiconductor class for organic field-effect transistors (OFETs) based on thienoquinoidal structures is reported. A newly employed terminal group, the ((alkyloxy)carbonyl)cyanom-ethylene moiety, plays two important roles in the thienoquinoidal compounds: i.e., as an electron-withdrawing group to keep the LUMO energy level sufficiently low for acting as an n-channel organic semiconductor and as a solubilizing group to facilitate solution processability. For the construction of this class of compounds, a new, straightforward synthetic method was established and applied to oligothienoquinoidal and fused thienoquinoidal systems. When both core and alkyl groups in the ester moiety were tuned, the thienoquinoidals exhibited good solubility, stability in the atmosphere, and electron-accepting properties, as well as solution processability. Solution-processed FETs based on the terthienoquinoid derivative with ((n-alkyloxy)carbonyl)cyanomethylene moieties exhibit good electron mobilities (μ~0.015 cm~2 V~(-1) s~(-1)) and I_(on)/I_(off) ≈10~5 under ambient conditions. Vapor-processed FETs using the benzodithienoquinoidal derivative showed similar n-channel FET characteristics.
机译:报道了一种基于噻吩醌结构的用于有机场效应晶体管(OFET)的新的n沟道半导体类别。新使用的末端基团(((烷氧基)羰基)氰基-乙烯部分)在硫代喹啉化合物中起两个重要作用:即作为吸电子基团,以保持LUMO能级足够低以用作n通道有机半导体和作为增溶基团以促进溶液的可加工性。对于这类化合物的构建,建立了一种新的,直接的合成方法,并将其应用于寡硫喹啉和稠合的硫喹啉体系。当调节酯部分中的核心和烷基基团时,噻吩并喹啉类化合物表现出良好的溶解性,在大气中的稳定性和电子接受性能以及溶液的可加工性。基于具有((n-烷氧基)羰基)氰基亚甲基部分的对苯二醌衍生物的固溶FET具有良好的电子迁移率(μ〜0.015 cm〜2 V〜(-1)s〜(-1))和I_(on)/在环境条件下I_(off)≈10〜5。使用苯并二噻吩并喹啉衍生物的气相处理FET表现出相似的n沟道FET特性。

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  • 来源
    《Journal of the American Chemical Society》 |2010年第30期|p.10453-10466|共14页
  • 作者单位

    Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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