首页> 外文期刊>Journal of the American Chemical Society >Metallization of a Hypervalent Radical Dimer: Molecular and Band Perspectives
【24h】

Metallization of a Hypervalent Radical Dimer: Molecular and Band Perspectives

机译:超价自由基二聚体的金属化:分子和带的角度。

获取原文
获取原文并翻译 | 示例
           

摘要

Variable pressure and temperature conductivity measurements on the bisthiaselenazolyl radical dimer [1a]_2 have established the presence of a weakly metallic state over the pressure range 5-9 GPa. To explore the origin of this metallization we have examined the crystal and molecular structure of [1a]_2 as a function of pressure. At ambient pressure the dimer consists of two radicals linked by a hypervalent 4-center 6-electron S...Se-Se...S σ-bond into an essentially coplanar arrangement. The dimers are packed in cross-braced slipped π-stack arrays running along the x-direction of the monoclinic (space group P2_1/c) unit cell. Pressurization to 4 GPa induces little change in the molecular structure of [1a]_2 or in the slipped π-stack crystal architecture. Near 5 GPa, however, stress on the dimer leads to buckling of the two halves of the molecule and a contraction in the metrics of the S...Se-Se...S unit. These structural changes can be understood in terms of an electronic configurational switch from a 4-center 6-electron σ-bonded dimer to a more conventional π-bonded arrangement. At the same time the slipped π-stack arrays undergo a concertina-like compression, and the crystal structure experiences highly anisotropic changes in cell dimensions. DFT calculations on the molecular electronic structure of the dimer indicate a marked decrease in the HOMO-LUMO gap as the dimer buckles. Related solid-state calculations indicate a rapid closure of the valence/conduction band gap in the same pressure region and the formation of a quasi-metallic state. Metallization of [1a]_2 thus arises as much from intramolecular changes, which give rise to a collapse of the HOMO-LUMO gap and near coalescence of the valence and conduction bands, as from increased intermolecular interactions, which cause widening and overlap of the band edges.
机译:在双硫代咪唑基自由基二聚体[1a] _2上进行的可变压力和温度电导率测量已确定在5-9 GPa的压力范围内存在弱金属状态。为了探索这种金属化的起源,我们研究了[1a] _2的晶体和分子结构与压力的关系。在环境压力下,二聚体由两个自由基组成,这些自由基通过高价4中心6电子S ... Se-Se ... Sσ键相连,形成基本上共面的排列。二聚体包装在沿着单斜晶胞(空间群P2_1 / c)的x方向延伸的交叉支撑的滑动π堆栈阵列中。加压至4 GPa不会引起[1a] _2分子结构或π堆叠滑动晶体结构的变化。但是,接近5 GPa时,二聚体上的应力会导致分子的两半弯曲并导致S ... Se-Se ... S单位的收缩。这些结构上的变化可以通过从4中心6电子σ键合二聚体到更常规的π键合结构的电子配置转换来理解。同时,滑动的π堆栈阵列经历了类似手风琴状的压缩,并且晶体结构的晶胞尺寸经历了高度各向异性的变化。对二聚体分子电子结构的DFT计算表明,随着二聚体弯曲,HOMO-LUMO间隙显着减小。相关的固态计算表明,在相同的压力区域内价/导带隙迅速闭合,并形成了准金属态。 [1a] _2的金属化因此起因于分子内变化,这引起HOMO-LUMO间隙的崩溃以及价带和导带的接近合并,如分子间相互作用的增加导致谱带的扩展和重叠边缘。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2010年第13期|p.4876-4886|共11页
  • 作者单位

    Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5E2, Canada;

    Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada;

    Department of Earth Sciences, University of Western Ontario, London, Ontario N6A 5B7, Canada;

    Department of Earth Sciences, University of Western Ontario, London, Ontario N6A 5B7, Canada;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

    Department of Earth Sciences, University of Western Ontario, London, Ontario N6A 5B7, Canada;

    Department of Physics, University of Ottawa, Ottawa, Ontario KIN 6N5, Canada;

    Materials Science Division, Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Sayo, Hyogo 679-5198, Japan;

    Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号