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Preparation of amorphous TiS x thin film electrodes by the PLD method and their application to all-solid-state lithium secondary batteries

机译:PLD法制备非晶态TiS x 薄膜电极及其在全固态锂二次电池中的应用

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摘要

Titanium sulfide thin film electrodes were prepared by the pulsed laser deposition method using a KrF excimer laser. Thin films of various compositions were prepared under several deposition conditions such as Ar gas pressure, laser fluence, and target-substrate distance. The thickness of the titanium sulfide thin film prepared under Ar gas pressure of 0.01 Pa, the pulse energy of 200 mJ/pulse, and the distance of 5 cm between the target and the substrate was ca. 400 nm. The films prepared at room temperature showed no peaks in the XRD pattern and no periodic lattice fringe in high-resolution transmission electron microscopic images, suggesting that they were amorphous. An all-solid-state cell using a TiS4.0 thin film electrode formed on a pelletized Li2S–P2S5 glass–ceramic electrolyte showed the reversible capacity of 543 mAh g−1, which was higher than that of a cell using a TiS1.7 film. The former solid-state cell retained higher capacity for 20 cycles at room temperature.
机译:通过使用KrF准分子激光器的脉冲激光沉积法制备硫化钛薄膜电极。在几种沉积条件下(例如Ar气压,激光能量密度和目标与基材的距离)制备各种组成的薄膜。在0.01Pa的Ar气压下制备的硫化钛薄膜的厚度为约200mJ / pulse,脉冲能量为200mJ / pulse,靶与基板之间的距离为5cm。 400纳米在高分辨率透射电子显微镜图像中,室温下制备的膜在XRD图谱中没有峰,也没有周期性的晶格条纹,表明它们是非晶态的。使用TiS4.0 薄膜电极形成的粒状Li2 S–P2 S5 玻璃陶瓷电解质形成的全固态电池的可逆容量为543 mAh g-1 ,高于使用TiS1.7 膜的电池。前一种固态电池在室温下可保持20个循环的更高容量。

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  • 来源
    《Journal of Materials Science》 |2012年第18期|p.6601-6606|共6页
  • 作者单位

    Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan;

    Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, 1-2 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8570, Japan;

    Department of Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan;

    Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan;

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