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Thermophysical and Geometrical Effects on the Thermal Performance and Optimization of a Three-Dimensional Integrated Circuit

机译:热物理和几何效应对三维集成电路热性能的影响及优化

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摘要

A comprehensive analysis and optimization of a three-dimensional integrated circuit (3D IC) structure and its thermophysical attributes are presented in this work. The thermophysical and geometrical attributes studied in this paper include the die, device layer, heat sink, and heat spreader, which are critical structures within a 3D IC. The effect of the power density of the device layer which is the source of heat generation within the chip as well as the through silicon vias (TSV) and microbumps is also considered in our investigation. The thermophysical and geometrical parameters that have a significant impact on the thermal signature of the 3D IC as well as those that have an insignificant impact were established. The comprehensive analysis of different geometrical and thermophysical attributes can guide the design and optimization of a 3D IC structure and decrease the cost.
机译:在这项工作中,对三维集成电路(3D IC)结构及其热物理属性进行了全面的分析和优化。本文研究的热物理和几何属性包括管芯,器件层,散热器和散热器,它们是3D IC中的关键结构。在我们的研究中,还考虑了器件层功率密度的影响,器件层功率密度是芯片内的热量产生源以及硅通孔(TSV)和微型凸点。建立了对3D IC的热信号有重大影响的热物理参数和几何参数,以及影响不大的热物理参数和几何参数。对不同几何和热物理属性的综合分析可以指导3D IC结构的设计和优化,并降低成本。

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