Numerical study of interface shape control in the VGF growth of compound semiconductor crystal

摘要

A numerical simulation study was carried out for the crystal growth of InP by the liquid encapsulated vertical gradient freeze method. The effects of crucible cap and crucible rotation on the melt/crystal interface shape were investigated. Results showed that the use of crucible cap leads to a steeper vertical temperature gradient in the melt and crystal, a lower melt/crystal interface position, and consequently a lower growth rate compared with the system with no cap. The main reason for such results was the reflective heat from the cap surface that increased the temperature of the system. It was also observed that the application of steady crucible rotation suppressed the natural convection in the melt, and the interface shape became flatter with an increase in the rotation rate.