Oxygen-isotope-doped silicon crystals grown by a floating zone method

摘要

We have grown silicon single crystals doped with isotope oxygen of ~(18)O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of ~(18)O was doped from the gas phase with argon gas during crystal growth. The isotope of ~(18)O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of ~(18)O from the gas phase through a liquid-gas interface.