Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission

摘要

We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 ℃. In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.