High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6 x 105 A/cm2 grown by metal-organic vapor-phase epitaxy

摘要

On-wafer uniformity of InP-based InGaAs/AlAs resonant tunneling diodes (RTDs) grown in a mass-production-type metal-organic vapor-phase epitaxy (MOVPE) reactor was investigated. The X-ray diffraction (XRD) measurements revealed the high uniformity of layer thickness and composition of the 3-in. RTD wafers. The RTDs exhibited excellent current-voltage characteristics with high J_P of over 6 × 10~5 A/cm~2 and the peak-to-valley ratio (PVR) of over 3. A small variation of J_P of + 7.9% across the 3-in. wafers was obtained, which corresponded to on-wafer AlAs barrier thickness variation of ± 0.03 nm. The small run-to-run variation of J_P also indicates good reproducibility.