机译:GaN /蓝宝石模板和独立式GaN衬底上近晶格匹配的AlInN合金的金属有机气相外延和表征
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Kyrna Technologies, Inc., Raleigh, NC 27617, USA,Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA;
Kyrna Technologies, Inc., Raleigh, NC 27617, USA;
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH 44106, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
A3. metalorganic vapor phase epitaxy; B1. nitrides; B2. semiconducting Ⅲ-Ⅴ materials; B3. light emitting diodes;
机译:金属有机气相外延沉积在M面蓝宝石上的半极性GaN模板和外延侧向过长的薄膜的微观结构表征。
机译:金属有机气相外延生长在r面蓝宝石衬底上生长的[1120]取向的InGaN / GaN薄膜的阴极发光特性
机译:金属有机汽相外延技术表征不同Al含量的AlGaN / GaN异质结构和生长在100毫米直径蓝宝石衬底上的高电子迁移率晶体管
机译:金属有机气相外延生长在GaN上的AlInN / GaN和AIN / GaN超晶格的晶体和电学性质
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:交叉堆叠的碳纳米管通过氢化物气相外延辅助了自支撑式GaN衬底的自分离
机译:通过选择性金属有机气相外延,Mg-Enviant of Patched GaN / Sapphire底物上的GaN的横向过度生长