机译:不同极性Al_xGa_(1-x)N层中缺陷的TEM研究
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentieva Avenue 13, 630090 Novosibirsk, Russia;
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentieva Avenue 13, 630090 Novosibirsk, Russia;
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentieva Avenue 13, 630090 Novosibirsk, Russia;
Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary;
Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary;
A1. Defects; A1. Nucleation; A3. Molecular beam epitaxy; B1. Nitrides;
机译:掺杂浓度不同的Al_xGa_(1-x)As梯度层的InGaP / Al_xGa_(1-x)As / GaAs异质结双极晶体管的综合研究
机译:低温生长GaAs / Al_xGa_(1-x)As多层结构中空位缺陷分布的研究
机译:Al含量x> 0.5的重掺杂Al_xGa_(1-x)N:Si层中具有强电子-声子耦合的缺陷的供体-受体对发射
机译:在AL_XGA_(1-X)和IN_XGA_(1-x)上的分子束外延生长的ZnSe膜中的晶体质量和Ga偏析作为GaAs基板上的缓冲层
机译:通过控制退火实验研究异质外延Si(1-x)Ge(x)薄膜的形态不稳定性和缺陷形成
机译:TEM / STEM研究双层/三层宽带SiO2减反射膜的截面形态
机译:金刚石锯切诱导铸造单晶硅晶片缺陷层的微观眼镜研究
机译:TEm结合al / sub X / Ga / sub 1-X /作为标记层作为研究Gaas mBE生长的技术