Impurity incorporation of unintentionally doped Al_xGa_1-xAs during MOVPE

摘要

Unintentionally doped impurities in Al_xGa_1-xAs grown with trimethylgallium (TMG) trimethylaluminum (TMA), and arsine (AsH_3) were studied using a low-pressure disk-rotating metal-organic vapor-phase epitaxy (MOVPE) system. It was found that the growth temperature and AsH_3 flow rate dependency of the carbon concentration is almost the same As that of the residual carrier concentration.