Comparison of binary and ternary growth over trenches using MOVPE

摘要

The MOVPE growth of Al_(0.3)Ga_(0.7)As over trenches in compared to the growth of its binary components GaAs and AlAs. The growth rats for GaAs, AlAs and AlGaAs on planar (1 0 0), (3 1 1)A and (3 1 1)B substrates are independent of orientation and the AlGaAs growth rate and composition can be described by the sum of the two binaries. For growth over trenches with {3 1 1}-sidewalls the growth rate and the compoistion of the sidewalls are different compared to (1 0 0) due to the interplay of the adjacent facets.