X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH_3 in ultra high vacuum

摘要

This paper reports the results of X-ray multi-crystal diffractometry analysis of heavily Te-doped (1 0 0)-GaAs epitaxial thin lyers grown by intermittent injection of TEGa/AsH_3 in an ultra high vacuum. It is shown that the differential lattice strain in <1 0 0> direction was increased monotonically with increase of impurity concentration in the range of 5 × 10~(19)-5 × 10~(20) cm~(-3), but full-width at half-maximum of rocking curve was kept constant at about 360s of arc.