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首页> 外文期刊>Journal of Crystal Growth >Surface reconstruction and crystal structure of MgSe films grown on ZnTe substrates by MBE
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Surface reconstruction and crystal structure of MgSe films grown on ZnTe substrates by MBE

机译:MBE在ZnTe衬底上生长的MgSe膜的表面重建和晶体结构

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MgSe is an important component in Mg-based ternary or quaternary alloys, but is less understood due to its hygroscopy and unstable zinc blende structure. In order to get a clear knowledge of this material, we have investigated the growth of MgSe films of ZB,(zinc blende), structure on ZnTe substrates by MBE (molecular beam epitaxy). The surface reconstruction of MgSe under different flux ratios and growth temperatures have been studied systematically by RHEED (reflected high-energy electron diffraction). (4 x 1) reconstruction is observed under Ⅵ/Ⅱ flux ratios of 16-30, while (2 x 1) reconstruction appears at higher Ⅵ/Ⅱ ratios. The oscillation of RHEED intensity at the first stage of MgSe growth indicated that 2D growth was achieved, and thereafter the growth mode changed to 3D growth due to the lattice mismatch. The structure of the MgSe layer is further confirmed by XRD (X-ray diffraction). The XRD results indicated the growth of a MgSe film having a ZB structure for a layer below 2000 A thick. No diffraction is observed from 2000 to 4000 A thick MgSe films. Thicker samples show the formation of MgSe layers having a rock salt structure.
机译:MgSe是Mg基三元或四元合金中的重要成分,但由于其吸湿性和不稳定的锌混合物结构,人们对其了解较少。为了清楚地了解这种材料,我们通过MBE(分子束外延)研究了ZnTe衬底上的ZB(锌共混物)MgSe膜结构的生长。通过RHEED(反射高能电子衍射)系统地研究了不同通量比和生长温度下MgSe的表面重建。在Ⅵ/Ⅱ通量比为16-30时观察到(4 x 1)重构,而在更高的Ⅵ/Ⅱ比下出现(2 x 1)重构。在MgSe生长的第一阶段,RHEED强度的振荡表明实现了2D生长,此后由于晶格失配,生长模式变为3D生长。 MgSe层的结构通过XRD(X射线衍射)进一步确认。 XRD结果表明对于厚度小于2000 2000的层,具有ZB结构的MgSe膜的生长。在2000至4000 A厚的MgSe薄膜中未观察到衍射。较厚的样品显示出具有岩盐结构的MgSe层的形成。

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