Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

摘要

A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of "stirring" defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 ℃. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.