...
机译:通过控制原子结构,Cr浓度和载流子密度实现Cr掺杂Si中的室温铁磁性:第一性原理研究
State Key Laboratory of Surface Physics, Key Laboratory for Computational Physical Sciences (MOE), and Department of Physics, Fudan University, Shanghai 200433, China;
College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211100, China;
State Key Laboratory of Surface Physics, Key Laboratory for Computational Physical Sciences (MOE), and Department of Physics, Fudan University, Shanghai 200433, China;
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China,State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China,Department of Physics and Astronomy, Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, South Korea;
机译:具有室温铁磁性能的Cr掺杂MS(M = Zn,Cd)纳米结构的溶剂热合成
机译:XAFS和从头算计算研究Cr掺杂(Bi_xSb_(1-x))_ 2Te_3的铁磁拓扑绝缘子中的局部原子和电子结构
机译:离子注入法制备室温铁磁Cr掺杂TiO_2(110)金红石型单晶
机译:在GaAs上由Momebre(111)在GaAs上生长的Cr-掺杂GaN薄膜中的室温铁磁性(111)基板
机译:分子固体和半导体中杂质的电子结构和性质的第一性原理研究:I.有机铁磁体中的mu和mu。二。硅光电系统中的。
机译:Cr掺杂的(SbBi)2Te3磁性拓扑绝缘子中的载流子介导的铁磁性
机译:错误至:通过溶剂热制剂的Cr掺杂Cds纳米粒子的室温铁磁性和光学性质