机译:通过插入薄的AlGaN中间层,在Si衬底上生长的InGaN / GaN多量子阱增强蓝色发光二极管的性能
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho Saiwai-Ku Kawasaki 212-8582, Japan;
机译:P-GaN / InGaN SPS的最后一个势垒和P-AlGaN / GaN SPS EBL增强了蓝色InGaN发光二极管的性能
机译:具有InGaN / GaN超晶格和梯度组成的InGaN / GaN超晶格中间层的InGaN发光二极管的性能增强
机译:带有AlGaN-GaN-AlGaN电子阻挡层的蓝色InGaN / GaN发光二极管的效率增强
机译:在Si(111)衬底上生长的InGaN / GaN MQW中具有薄AlGaN中间层的高效蓝光LED
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:从硅衬底上分离出来的独立式GaN上的InGaN / GaN蓝色发光二极管的正向隧穿特性研究
机译:在纳米孔GaN层上生长的IngaN / GaN多量子孔发光二极管的增强性能
机译:Nichia alGaN / InGaN / GaN蓝色发光二极管的寿命试验