Effect of PbO Seeding Layers on the Structure and Properties of the Sol-Gel-Derived BiScO_3-PbTiO_3 Thin Films

摘要

Structure and dielectric/piezoelectric properties of the sol-gel-derived 0.36BiScO_3-0.64PbTiO_3 (BSPT) thin films deposited on Pt(lll)/Ti/SiO_2/Si(100) substrates with PbO seeding layers are investigated. Highly (100)-oriented BSPT thin films with thickness ranging from 250 to 950 nm were synthesized by alternatively coating PbO seeding layers and BSPT layers. The as-deposited BSPT film with thickness of 950 nm showed high dielectric constant of 1850 and effective piezoelectric coefficient d_(33)~- of approximate 150 pm/V, the latter was comparable with that of the (001) epitaxial BSPT films grown on Nb-SrTiO_3 single crystal substrates. The influence of PbO seeds on the structure and electric properties of the films is discussed as well.