Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

摘要

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET) in which the front gate consists of two materials with different work functions.