Source of Surface Morphological Defects Formed on 4H-SiC Homoepitaxial Films

摘要

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO_2. From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12) < 4403 > type.