Electron Mobility in Silicon Gate-AII-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-lnsulator Substrate Extracted by Improved Split Capacitance-Voltage Method

摘要

In this paper, we report our experimental study on electron mobility in silicon gate-all-around (GAA) nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) on (100)-oriented silicon-on-insulator (SOI) substrates. With the aim of accurate mobility measurement, the improved split capacitance-voltage (C-V) method is utilized to remove parasitic resistance and capacitance. Accurate electron mobility in [100]-directed nanowires is achieved for the first time and shows high electron mobility that approaches the (100) bulk universal curve, while electron mobility in [110]-directed nanowires shows large degradation from the universal curve. The underlying physical mechanisms of mobility behaviors in nanowires on (100)-oriented SOI substrates are also investigated.