首页> 中文期刊> 《中国有色金属学报》 >Si(100)衬底上(110)取向La2/3Sr1/3MnO3薄膜的制备与性能

Si(100)衬底上(110)取向La2/3Sr1/3MnO3薄膜的制备与性能

         

摘要

La2/3Sr1/3MnO3 films with highly (110) preferred orientation were deposited on Si (100) substrate without any buffer layer by using a pulsed laser deposition technique. The effects of oxygen pressure on crystallinity, preferred orientation, surface morphology, magnetic and electrical transport properties of the films were investigated. The results show that, comparing to the films deposited at other ambient oxygen pressure, La2/3Sr1/3MnO3 films deposited at 10 Pa presented highly (110) preferred orientation with highly crystalline quality and have more homogeneous grain size distribution as well as dense microstructure. Meanwhile, the roughness of the films also shows the smallest root mean square value (Rrms) of 1.35 nm. The film with the (110) preferred orientation shows higher saturated magnetization (Ms), . Higher metal-insulator transition temperature (TM-I) and lower resistivity (p) than that without preferred orientation one.%用脉冲激光沉积法在Si(100)衬底上制备了(110)择优取向的La2/3Sr1/3MnO3薄膜,研究了环境氧压对薄膜结晶度、取向、表面形貌和微结构的影响.结果表明:10 Pa氧压下沉积的薄膜具有高结晶度的(110)择优取向,晶粒分布均匀,晶粒分布均匀,表面均方根粗糙度Rrms为1.35 nm.与无明显择优取向的薄膜相比,(110)择优取向的La2/3Sr1/3MnO3薄膜具有较高的饱和磁化强度(Ms)、金属-绝缘体相变温度(TM-I)和较低的电阻率(ρ).

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