机译:负偏置温度不稳应力条件下SiON / HfO_2 / TaN p型金属氧化物半导体场效应晶体管中栅极电流随机电报信号噪声的特性
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
rnSEMATECH, Austin, TX 78741, U.S.A.;
rnIngram School of Engineering, Texas State University-San Marcos, San Macros, TX 78666, U.S.A.;
rnInstitute of Microelectronics, Peking University, Beijing 100871, P. R. China;
机译:HfO_2 /金属栅极p沟道金属氧化物半导体场效应晶体管的负偏置温度不稳定后栅极电流异常驼峰的研究
机译:小型p沟道金属氧化物半导体场效应晶体管的负偏置温度不稳定性与随机电报噪声之间关系的统计分析
机译:在负偏压温度不稳定性应力作用下,掺入氮和硅的HfO_2栅极电介质的p沟道金属氧化物半导体场效应晶体管产生体和界面陷阱
机译:具有Si_2H_6钝化和HfO_2高k和TaN金属栅极的Ge_(0.97)Sn_(0.03)P-MOSFET的制备和负偏压温度不稳定性(NBTI)研究
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:大偏压对具有超薄栅极电介质P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性的影响