...
机译:自由基氮化技术控制Al_2O_3 / Ge栅堆叠结构的界面特性
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan;
机译:电子回旋共振等离子体氮化和溅射沉积技术制备Ge金属绝缘体结构Ta_2O_5 / GeN_x栅绝缘体
机译:等离子体氮化过程中光辐射引起的Al_2O_3 / Ge栅堆叠结构损伤的表征
机译:氮的引入控制Pr-氧化物/ Ge栅堆叠结构的界面性质
机译:改进GE栅极堆栈技术GEO_2界面层的氮化
机译:通过扫描探针显微镜研究石墨烯和2D材料异质结构的界面性质
机译:多孔融合技术制备具有可控的微观结构和力学性能的多孔支架
机译:形成P缀合的硝基氧基轴承1,2,5-噻二唑环及其磁性的一维堆叠结构
机译:控制纳米环境中的界面特性:一种新的智能系统技术