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机译:具有凹入式栅极和p-GaN背势垒的常关型AIGaN / GaN金属氧化物半导体异质结构场效应晶体管
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea,Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea;
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea;
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea;
机译:具有凹入式栅极的AIGaN / GaN异质结构上的GaN金属氧化物半导体场效应晶体管
机译:栅极结构常压AlGaN / GaN异质结构场效应晶体管与P-GaN帽层
机译:两种类型的栅控常关型AIGaN / GaN异质结构场效应晶体管的比较
机译:性能改进的常关型AlGaN / GaN高电子迁移率晶体管,在凹入的栅极下方具有设计的p-GaN区域
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:通过UV照射的AlGaN / GaN金属氧化物半导体异质结构场效应晶体管特性的变形