Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy

摘要

In molecular-beam epitaxy, isoelectronic Te doping induces the serious change of the physical properties of ZnO films: ⅰ) Incorporated Te concentration is proportional to the 2.2th power of injected Te flux in the logarithmic scale; ⅱ) Te-doped ZnO lattices are dominated by the relaxation mechanism of compressive strain; ⅲ) incorporated Te atoms substitute to the O sites of ZnO lattices; ⅳ) the low-level injection of Te atoms below ～10~(19) cm~(-3)improves the crystalline quality in the ZnO films; and ⅴ) isoelectronic Te centers act as donor impurities, resulting in the increase of electrons in the ZnO films.