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首页> 外文期刊>Japanese journal of applied physics >Molecular doping of regioregular poly(3-hexylthiophene) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane investigated by infrared spectroscopy and electrical measurements
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Molecular doping of regioregular poly(3-hexylthiophene) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane investigated by infrared spectroscopy and electrical measurements

机译:通过红外光谱和电学测量研究2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷对规则型聚(3-己基噻吩)层的分子掺杂

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摘要

Molecular doping is a charge-transfer process intended to improve the performance of organic electronic devices such as organic transistors. We have investigated molecular doping of regioregular poly(3-hexylthiophene) (P3HT) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS) and conductivity measurements. IRAS data confirm that F-4-TCNQ acts as an effective p-type dopant for P3HT; highly doped P3HT displayed an intense, broad absorption band due to polaron ("polaron band") and a high carrier (hole) density which are indicative of the charge transfer between F-4-TCNQ and P3HT. We demonstrate that the charge (hole) transferred from the dopant molecule is distributed along the P3HT polymer chain and spreads over at least 10 thiophene monomer units on the chain. From a comparison of the measured conductivity of F-4-TCNQ-doped P3HT layers with the carrier density, we show that the carrier mobility is proportional to the concentration of carriers (holes), which suggests that F-4-TCNQ doping induces the conformational change of P3HT polymer chains to enhance the mobility of holes in the films of the doped P3HTs. (C) 2015 The Japan Society of Applied Physics
机译:分子掺杂是一种电荷转移过程,旨在改善有机电子器件(例如有机晶体管)的性能。我们使用红外吸收光谱研究了2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷(F-4-TCNQ)对区域规则的聚(3-己基噻吩)(P3HT)层的分子掺杂。多种内部反射几何(MIR-IRAS)和电导率测量。 IRAS数据证实F-4-TCNQ可作为P3HT的有效p型掺杂剂。由于极化子(“极化子带”)和高载流子(空穴)密度,高掺杂的P3HT显示出强烈的宽吸收带,这表明F-4-TCNQ和P3HT之间的电荷转移。我们证明,从掺杂剂分子转移来的电荷(空穴)沿P3HT聚合物链分布,并在链上至少分布10个噻吩单体单元。通过将F-4-TCNQ掺杂的P3HT层的电导率与载流子密度进行比较,我们发现载流子迁移率与载流子(空穴)的浓度成正比,这表明F-4-TCNQ掺杂会诱导载流子的迁移。 P3HT聚合物链的构象变化,以增强掺杂的P3HTs膜中空穴的迁移率。 (C)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第9期|091601.1-091601.8|共8页
  • 作者单位

    Tohoku Univ, Grad Sch Biomed Engn, Sendai, Miyagi 9808579, Japan|Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan|Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan;

    Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, Grad Sch Biomed Engn, Sendai, Miyagi 9808579, Japan|Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan;

    Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan|Tokyo Univ Technol, Hachioji, Tokyo 1920982, Japan;

    Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan;

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