机译:在90 nm互补金属氧化物半导体(CMOS)工艺中设计和实现5-6 GHz的1-V变压器磁反馈低噪声放大器(LNA)
Microelectronics Circuit Design Group, School of Electrical and Computer Engineering,National Technical University of Athens, Athens, Greece;
rnMicroelectronics Circuit Design Group, School of Electrical and Computer Engineering,National Technical University of Athens, Athens, Greece;
rnMicroelectronics Circuit Design Group, School of Electrical and Computer Engineering,National Technical University of Athens, Athens, Greece;
rnMicroelectronics Circuit Design Group, School of Electrical and Computer Engineering,National Technical University of Athens, Athens, Greece;
rfic design; sub-100 nm cmos; low power; lna; magnetic feedback; miller effect;
机译:采用90 nm CMOS的超低功耗变压器反馈60 GHz低噪声放大器
机译:90nm CMOS中的超低功耗变压器反馈60 GHz低噪声放大器
机译:采用90nm CMOS工艺的55-71GHz紧凑型和宽带分布式有源变压器功率放大器的设计与分析
机译:1 V双变压器反馈LNA的设计与实现和5 GHz波段变压器 - 反馈VCO
机译:用于0.18微米CMOS中5--6GHz WLAN的1V变压器反馈低噪声放大器。
机译:采用90纳米CmOs的超低功耗变压器 - 反馈60 GHz低噪声放大器
机译:采用45nm绝缘硅互补金属氧化物半导体(sOI CmOs)的94GHz温度补偿低噪声放大器。