A 0.7-dB NF,+8.2-dBm IIP3 CMOS low noise amplifier using frequency selective feedback

摘要

A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third-and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-mu m CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4mW of power consumption at 900MHz. Copyright (C) 2015 John Wiley & Sons, Ltd.