首页> 外文期刊>International journal of circuit theory and applications >Pulsed time-of-flight pixel with on-chip 20 klux background light suppression in standard CMOS technology
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Pulsed time-of-flight pixel with on-chip 20 klux background light suppression in standard CMOS technology

机译:采用标准CMOS技术的片上20 klux背景光抑制的脉冲飞行时间像素

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摘要

A novel time-of-flight pixel designed in 0.18-m standard CMOS technology with an indirect pulsed technique is presented. This design is capable of operating in ambients with high levels of background light, since a novel in-pixel background suppression circuit makes it robust up to 20klux of ambient light. In addition to this, the pixel incorporates an adaptive number of accumulations circuit that selects the optimum number of accumulations for each situation at pixel level, avoiding saturation even under high illumination conditions.
机译:提出了一种采用间接脉冲技术,采用0.18-m标准CMOS技术设计的新型飞行时间像素。由于新颖的像素内背景抑制电路使其能够在高达20klux的环境光下保持稳定,因此该设计能够在具有高水平背景光的环境中工作。除此之外,像素还包含一个自适应数量的累加电路,该电路在像素级别为每种情况选择最佳的累加数量,即使在高光照条件下也可以避免饱和。

著录项

  • 来源
  • 作者单位

    Univ Santiago de Compostela, Ctr Invest Tecnoloxias Informac CiTIUS, Santiago De Compostela 15782, La Coruna, Spain;

    Univ Santiago de Compostela, Ctr Invest Tecnoloxias Informac CiTIUS, Santiago De Compostela 15782, La Coruna, Spain;

    Univ Santiago de Compostela, Ctr Invest Tecnoloxias Informac CiTIUS, Santiago De Compostela 15782, La Coruna, Spain;

    Univ Santiago de Compostela, Ctr Invest Tecnoloxias Informac CiTIUS, Santiago De Compostela 15782, La Coruna, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    3D sensor; optical sensor; standard CMOS technology; time of flight;

    机译:3D传感器;光学传感器;标准CMOS技术;飞行时间;

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