GENERATION OF NATIVE DEFECTS IN N-TYPE Hg_0.8Cd_0.2Te CRYSTALS DURING LOW-TEMPERATURE EQUILIBRATION

摘要

The effect of low-temperature(approx.<120℃) annealing in an N_2 atmosphere on the electrical and photoelectric properties of n-type Hg_0.8Cd_0.2Te crystals was studied. Generation of mercury vacancies (acceptors )was shown to be a dominant process ;at the same time, diffusion of Hg interstitials originating from inclusions was also observed. The electrical and photoelectric properties of the annealed crystals indicate that the defect structure is nonuniform. The los-temperature diffusivity of Hg depends on the acceptor concentration and exhibits Arrhinius behavior with an activation energy triangle openEa approx=0.7 eV.