Frontside etching in GaAs/AlGaAs devices

摘要

The challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devices are well known. In this article, the development by Unaxis Semiconductors of a patent pending process is discussed. This process offers controllable etching rates and high selectivity to AlGaAs while minimizing exposure to damaging high energy ion bombardment common to many existing processes.