首页> 外文期刊>IEICE Transactions on Electronics >Behaviors of Negative Resistances and Its Influences on VCO Design
【24h】

Behaviors of Negative Resistances and Its Influences on VCO Design

机译:负电阻的行为及其对VCO设计的影响

获取原文
获取原文并翻译 | 示例
       

摘要

The features of the negative resistance in com- mon source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three- Capacitor model. A design procedure is then developed. The re- Sults are applied to a design of wide band oscillator at the several Gigahertz region.
机译:研究了宽带VCO的公共源极和公共栅极FET配置中的负电阻特性。简化的三电容器模型也对它们进行了解释。然后制定设计程序。结果被应用于几个千兆赫兹区域的宽带振荡器设计。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号