rfスパッタリングによりErドープTaO_x薄膜を成膜し,アニール後,波長550nm及び670nm付近の2つの発光ピークが発現することを確認した.他の手法で作製されたErドープTaO_xと同様,波長550nm付近の発光ピークが優勢であり,肉眼では緑色発光として観察することができた.更に,Er濃度0,96mol%程度,アニール温度900℃,アニール時間20分とした場合が,波長550nm付近のピーク強度が最大となることがわかった.%Er-doped TaO_x films were prepared by using rf magnetron sputtering. Visible photoluminescence was obtained from the films after annealing under excitation with a He-Cd laser (λ=325 nm). Two peaks having wavelengths around 550 nm and 670 nm were observed from the films annealed at 800-1100℃. The strongest intensity of the 550-nm (green) peak was obtained from the film with 0.96 mol% of Er concentration after annealing at 900℃ for 20 min. Such sputtered films which emit visible light can be useful as high-index materials for novel active devices using autocloned photonic crystals.
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