Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network

摘要

Stochastic resonance phenomenon in GaAs-based nanowire field effect transistors (FETs) and their summing network is studied experimentally. Response to a weak signal of a nanowire FET operating in subthreshold region is enhanced by adding noise to gate. The response is further improved by forming a FET summing network and strong input-output correlation is obtained in wide noise voltage range. The effect of device variation in the network is also investigated and it is found to make the system respond the weak signal without tuning noise intensity.