Synthesis of small diameter silicon nanowires on SiO_2 and Si_3N_4 surfaces

摘要

We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO_2 and S13N4 surfaces. The SiNWs with the diameter comparable to the diameter of the Au nano-particles (10 ～ 20 nm) are similarly grown on those surfaces, as in the case of Si substrates which are commonly used for the wire growth. The growth temperature for obtaining dense SiNWs on these substrates is higher (460 ～ 470 ℃) than the case of normal Si substrates (440 ℃). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the directed growth over metal structures is also shown to be possible.