机译:无需后生长退火即可降低Si上Ge引脚光电二极管的反向电流
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;
机译:无需后生长退火即可降低Si上Ge引脚光电二极管的反向电流
机译:无需后生长退火即可降低Si上Ge引脚光电二极管的反向电流
机译:无需后生长退火即可降低Si上Ge引脚光电二极管的反向电流
机译:不进行后生长退火的Ge和SiGe引脚光电二极管的特性
机译:生长后退火的ZnSnN 2薄膜的沉积和表征。
机译:在神经性疼痛模型中脊髓神经胶质细胞源性神经营养因子输注逆转了Kv4.1介导的受损髓鞘原发传入神经元的Kv4.1介导的A型钾电流的减少
机译:基于反向衬底偏置的钉扎光电二极管CmOs图像传感器的设计与性能