机译:单元素相变存储器
School of Electrical and Computer Engineering, Cornell University, New York 14850, USA;
School of Electrical and Computer Engineering, Cornell University, New York 14850, USA;
Thin Film Materials Research Center, Korea Institute of Science and Technology, Korea;
School of Electrical Electronics Engineering, Ulsan College, KOREA;
National Program for Tera-level Nano Devices, Korea;
School of Electrical and Computer Engineering, Cornell University, New York 14850, USA;
memory; phase change memory; PCM; nonvolatile; GST;
机译:单个有源层相变存储器件中的中间状态三维有限元建模与表征
机译:单元素相变存储器
机译:单元素相变存储器
机译:单元素相变存储器
机译:以相变薄膜材料为栅绝缘体的新型单元件存储晶体管
机译:第3维度在单相钢全相数值模拟中对代表性体积元素(RVE)内的损伤启动和传播的影响
机译:采用相变材料的片上光子存储元件
机译:相位共轭镜作为光学联想记忆的阈值元素