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Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory

机译:Ag膜厚度对Ag纳米晶体形成的依赖性以制备聚合物非易失性存储器

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摘要

We have investigated the effect of Ag Nano-crystals on nonvolatile memory-cell fabricated whit a conductive polymer such as PVK. The structure of polymer nonvolatile memory-cell was PVK / Ag nano-crystals / PVK between the Al electrodes which feature size is the 4F~2 embedded with Ag nano-crystals in PVK (poly(N-vinylcarbazole). The polymer nonvolatile memory-cell embedded with Ag nano-crystals formed by the basis of 5-nm Ag film showed the memory margin (ratio of I_(on) to I_(off)) is ~5.0×10~1 and the retention time is more than 10~5 seconds. Therefore, it was confirmed that Ag nano-crystal's shape, size, isolation and distribution determine a nonvolatile memory characteristics.
机译:我们已经研究了Ag纳米晶体对非易失性存储单元的影响,该存储单元是用导电聚合物如PVK制成的。聚合物非易失性存储单元的结构为PVK / Ag纳米晶体/ Al电极之间的PVK,其特征是尺寸为4F〜2,并在PVK中嵌入了Ag纳米晶体(聚(N-乙烯基咔唑)。由5nm Ag膜形成的Ag纳米晶体嵌入的电池显示出的存储裕度(I_(on)与I_(off)之比)为〜5.0×10〜1,且保留时间大于10〜 5秒后,可以确认Ag纳米晶体的形状,大小,隔离和分布决定了非易失性存储特性。

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  • 来源
    《電子情報通信学会技術研究報告》 |2010年第109期|p.27-30|共4页
  • 作者单位

    National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea;

    National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea;

    National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea;

    National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    polymer; nonvolatile; memory; nano-crystal;

    机译:聚合物;非易失性记忆;纳米晶体;

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