InPベース波長2μm帯InGaAsSbN赤外量子井戸レーザ

摘要

波長2～3μm帯における中赤外半導体レーザは，CO_2，CH_4，NO_x，SO_2など地球環境に影響を及ぼす物質のモニターや，様々な物質の化学分析，リモートセンシング，レーザー医療等の分野で応用が期待されている。%InGaAsSbN quantum well (QW) laser diodes on InP in 2μm wavelength region were grown by molecular beam epitaxy (MBE). It was found that increase in Sb composition improved properties of InGaAsSbN QW laser diodes. We observed electroluminescence at 4.51μm at room temperature for InAsSbN QW laser diodes, and laser operation at 2.31 2μm at 190K. Annealing effects were also studied.